DocumentCode :
2432568
Title :
Single-instruction based programmable memory BIST for testing embedded DRAM
Author :
Lin, Chung-Fu ; Ou, Jen-Chieh ; Wang, Meng-Hsueh ; Ou, Yu-Sen ; Ku, Ming-Hsin
Author_Institution :
Infrastruct. Res. Dev. Center, Faraday Technol. Corp., Hsinchu, Taiwan
fYear :
2009
fDate :
28-30 April 2009
Firstpage :
291
Lastpage :
294
Abstract :
With the increasing functionalities in modern SoC design, the need for dense embedded memory is growing. The test issue for this high density embedded DRAM (eDRAM) macro in a complex integration environment is becoming an important issue. In this work, we propose a single-instruction based programmable memory BIST for testing an eDRAM macro. Based on our BIST design, the supported memory testing algorithms are classified into five groups. Moreover, a compact instruction is proposed to encode the operation of each group and a two-level address generator is adopted to produce all the required addressing indexes. The proposed architecture provides a better design tradeoff in terms of the area overhead and the programmability compared with the existing work.
Keywords :
DRAM chips; built-in self test; embedded systems; integrated circuit design; integrated circuit testing; system-on-chip; BIST design; SoC design; complex integration environment; dense embedded memory; eDRAM macro; embedded DRAM testing; single-instruction based programmable memory; supported memory testing algorithm; two-level address generator; Algorithm design and analysis; Application specific integrated circuits; Built-in self-test; Cities and towns; Costs; Decoding; Intellectual property; Random access memory; Registers; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2781-9
Electronic_ISBN :
978-1-4244-2782-6
Type :
conf
DOI :
10.1109/VDAT.2009.5158152
Filename :
5158152
Link To Document :
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