DocumentCode
2432568
Title
Single-instruction based programmable memory BIST for testing embedded DRAM
Author
Lin, Chung-Fu ; Ou, Jen-Chieh ; Wang, Meng-Hsueh ; Ou, Yu-Sen ; Ku, Ming-Hsin
Author_Institution
Infrastruct. Res. Dev. Center, Faraday Technol. Corp., Hsinchu, Taiwan
fYear
2009
fDate
28-30 April 2009
Firstpage
291
Lastpage
294
Abstract
With the increasing functionalities in modern SoC design, the need for dense embedded memory is growing. The test issue for this high density embedded DRAM (eDRAM) macro in a complex integration environment is becoming an important issue. In this work, we propose a single-instruction based programmable memory BIST for testing an eDRAM macro. Based on our BIST design, the supported memory testing algorithms are classified into five groups. Moreover, a compact instruction is proposed to encode the operation of each group and a two-level address generator is adopted to produce all the required addressing indexes. The proposed architecture provides a better design tradeoff in terms of the area overhead and the programmability compared with the existing work.
Keywords
DRAM chips; built-in self test; embedded systems; integrated circuit design; integrated circuit testing; system-on-chip; BIST design; SoC design; complex integration environment; dense embedded memory; eDRAM macro; embedded DRAM testing; single-instruction based programmable memory; supported memory testing algorithm; two-level address generator; Algorithm design and analysis; Application specific integrated circuits; Built-in self-test; Cities and towns; Costs; Decoding; Intellectual property; Random access memory; Registers; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
Conference_Location
Hsinchu
Print_ISBN
978-1-4244-2781-9
Electronic_ISBN
978-1-4244-2782-6
Type
conf
DOI
10.1109/VDAT.2009.5158152
Filename
5158152
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