Title :
Near-infrared InN nanowire optoelectronic devices on Si
Author :
Songrui Zhao ; Hieu Pham Trung Nguyen ; Zetian Mi
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
In this work, InN nanowire photo detectors on a Si platform were investigated, and a light response up to 1.55 μm was observed at room temperature. InN nanowire light sources on Si are also discussed.
Keywords :
III-V semiconductors; indium compounds; nanophotonics; nanosensors; nanowires; photodetectors; wide band gap semiconductors; InN; Si; nanowire light sources; nanowire photodetectors; near-infrared nanowire optoelectronic devices; temperature 293 K to 298 K; Light emitting diodes; Molecular beam epitaxial growth; Nanoscale devices; Optical surface waves; Photodetectors; Silicon; Substrates; InN nanowires; Si; optoelectronic devices;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4799-2766-1
DOI :
10.1109/SUM.2014.113
