A 2.4 GHz packaged power amplifier using GaAs PHEMT technology

Author

Rasmi, Amiza ; Marzuki, Arjuna ; Rose, M. Rafie Che ; Azmi, I.M. ; Rahim, Ahmad Ismat Abdul

Author_Institution

TM Innovation Centre, Telekom Malaysia R&D Sdn Bhd, Cyberjaya, Malaysia

fYear

2011

fDate

28-30 Sept. 2011

Firstpage

148

Lastpage

151

Abstract

This paper describes the design and measured performance of Monolithic Microwave Integrated Circuit (MMIC) power amplifier for wireless LAN applications in the 2.4GHz band. The power amplifier (PA) is designed using 0.15μm GaAs power PHEMT technology. The die size of this PA is 1.2mm × 0.7mm and this PA is also offered in 16-pin QFN package. With only 3.0 V of drain voltage (V_DS), the packaged PA exhibits an output power at 1dB gain compression (P1dB) of 14.01 dBm, Power-Added Efficiency (PAE) of 31.70% and gain of 7.51 dB, respectively. The maximum current, Imax of this packaged amplifier is 77.90mA and the power consumption for the device is 233.70mW.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; gallium arsenide; integrated circuit packaging; GaAs; MMIC power amplifier; QFN package; current 77.90 mA; efficiency 31.70 percent; frequency 2.4 GHz; gain 7.51 dB; monolithic microwave integrated circuit power amplifier; packaged power amplifier; power 233.70 mW; power PHEMT technology; power-added efficiency; size 0.15 mum; voltage 3.0 V; wireless LAN; Frequency measurement; Gain; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on

Conference_Location

Kota Kinabalu

Print_ISBN

978-1-61284-844-0

Type

conf

DOI

10.1109/RSM.2011.6088312

Filename

6088312