Characterization of the In0.53Ga0.47As n+nn+ Infrared Photodetectors

We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detectivity for an optically illuminated In 0.53 Ga 0.47 As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed in Ref. [1]. The responsivity and the detectivity are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure.