Studies of ZnTe back contacts to CdS/CdTe solar cells

Author

Gessert, T.A. ; Sheldon, P. ; Li, X. ; Dunlavy, D. ; Niles, D. ; Sasala, R. ; Albright, S. ; Zadler, B.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

419

Lastpage

422

Abstract

Ongoing research topics in CdS/CdTe photovoltaic (PV) device technology include development of a back contact demonstrating low resistance and stability, while using processes consistent with large-area manufacturing. In efforts toward this goal, the authors have a sequence of dry, high-temperature processes to provide this contact. The process eliminates the need for chemical etching, and is performed at ~300°C to aid in contact stability and adhesion. Applying this contact process to NREL-grown CdS/CdTe device material has resulted in efficiencies >12%. Devices with efficiencies ~10% have also been produced using material supplied by Solar Cells, Inc., and by Golden Photon, Inc

Keywords

II-VI semiconductors; cadmium compounds; ohmic contacts; semiconductor device manufacture; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; zinc compounds; 10 percent; 300 C; CdS-CdTe; CdS/CdTe solar cells; ZnTe; ZnTe back contacts; dry high-temperature processes; large-area manufacturing; ohmic contact adhesion; ohmic contact stability; photovoltaic device technology; resistance; stability; Chemical processes; Chemical technology; Contact resistance; Etching; Manufacturing processes; Photovoltaic cells; Photovoltaic systems; Solar power generation; Stability; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654117

Filename

654117