DocumentCode
243268
Title
Strain Relaxation and Material Quality Improvement of Compressively Strained GeSn Epitaxial Films through a Cyclic Rapid Thermal Annealing Process
Author
Mosleh, Aboozar ; Ghetmiri, Seyed Amir ; Conley, Benjamin R. ; Wei Du ; Shui-Qing Yu ; Naseem, Hameed ; Soref, Richard A. ; Sun, Guofa ; Tolle, John ; Margetis, Joe
Author_Institution
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
fYear
2014
fDate
14-16 July 2014
Firstpage
221
Lastpage
222
Abstract
GeSn films were annealed in cycles of 30 s at 450 and 500 C. The annealing temperature and number of cycles for material quality enhancement and relaxation depends upon Sn mole fraction and film thickness.
Keywords
germanium compounds; rapid thermal annealing; semiconductor epitaxial layers; GeSn; compressively strained epitaxial films; cyclic rapid thermal annealing process; material quality improvement; strain relaxation; temperature 450 C; temperature 500 C; time 30 s; Annealing; Films; Lattices; Photonic band gap; Strain; Tin; compressively strained films; germanium; germanium alloys; tin alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location
Montreal, QC
Print_ISBN
978-1-4799-2766-1
Type
conf
DOI
10.1109/SUM.2014.117
Filename
6903066
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