• DocumentCode
    2432785
  • Title

    Design of on-chip power-rail ESD clamp circuit with ultra-small capacitance to detect ESD transition

  • Author

    Chen, Shih-Hung ; Ker, Ming-Dou

  • Author_Institution
    Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    28-30 April 2009
  • Firstpage
    327
  • Lastpage
    330
  • Abstract
    A power-rail ESD clamp circuit with a new proposed ESD-transient detection circuit which adopts a ultra small capacitor to achieve the required functions has been presented and substantiated to own a long turn-on duration and high turn-on efficiency. In addition, the power-rail ESD clamp circuits with the new proposed ESD-transient detection circuit also presented an excellent immunity against the mis-trigger and the latch-on event under the fast power-on condition.
  • Keywords
    CMOS integrated circuits; capacitance; detector circuits; electrostatic discharge; ESD transition; fast power-on condition; on-chip power-rail ESD clamp circuit; ultra-small capacitance; CMOS technology; Capacitance; Clamps; Electrostatic discharge; Feedback circuits; Industrial electronics; Integrated circuit technology; MOSFETs; Protection; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4244-2781-9
  • Electronic_ISBN
    978-1-4244-2782-6
  • Type

    conf

  • DOI
    10.1109/VDAT.2009.5158161
  • Filename
    5158161