DocumentCode
2432837
Title
Program, erase and retention times of thin-oxide Flash-EEPROMs
Author
Iannaccone, G. ; Gennai, S.
Author_Institution
Dipt. di Ingegneria dell´´Inf., Univ. degli studi di Pisa, Italy
fYear
2000
fDate
22-25 May 2000
Firstpage
153
Lastpage
154
Abstract
The purpose of this work is the simulation of program, erase, and retention times of thin-oxide Flash EEPROMs, in which the floating gate is charged through Fowler-Nordheim (FN) or direct tunneling.
Keywords
flash memories; tunnelling; Fowler-Nordheim tunneling; computer simulation; direct tunneling; erase time; floating gate; program time; retention time; thin oxide flash EEPROM; Design optimization; Doping; EPROM; Electronic mail; Flash memory; Nonvolatile memory; Potential well; Threshold voltage; Tunneling; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869971
Filename
869971
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