Simulation of 0.35 /spl mu/m/0.25 /spl mu/m CMOS technology doping profiles

In this work, by taking into account a number of recent models, concentration-depth profiles from two different technologies have been successfully reproduced by using the TSUPREM-4 process simulator with a unique set of fitting parameters. At first, boron and phosphorous channel profiles, as well as source/drain n/sup +/ profiles, have been simulated for a 0.35 /spl mu/m CMOS technology with a calibrated version of the simulator. Next, this version has been successfully checked by simulating profiles of the same dopant species for a 0.25 /spl mu/m CMOS technology.