Title :
Reactive magnetron sputtering of transparent and conductive zinc oxide films deposited at high rates onto CIS/CIGS photovoltaic devices
Author :
Gillespie, T.J. ; Miles, W.A. ; Cueto, J. A del
Author_Institution :
Lockheed Martin Astronaut., Denver, CO, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties is exercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%
Keywords :
aluminium; cathodes; copper compounds; gallium compounds; indium compounds; semiconductor thin films; solar cells; sputtered coatings; ternary semiconductors; voltage control; zinc compounds; AM1.5 efficiencies; CIS/CIGS photovoltaic devices; Cu(In,Ga)Se2; Cu(InGa)Se2; CuInSe2; DC-powered reactive sputtering; ZnO; ZnO:Al; ZnO:Al thin-film materials; cathode voltage control; conductive zinc oxide films; high deposition rate; material properties control; process control; reactive magnetron sputtering; solar cells; transparent zinc oxide films; zinc-aluminum metal alloy target; Ceramics; Conducting materials; Conductive films; Costs; Inorganic materials; Material properties; Process control; Radio frequency; Sputtering; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654134
