The oxidation of copper-indium diselenide surfaces

Author

Diniz, A.S.A.C.

Author_Institution

Dept. of Energy Dev., Companhia Energetica de Minas Gerais, Belo Horizonte, Brazil

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

495

Lastpage

498

Abstract

The mechanisms, chemistry, structure and interface properties of native and grown oxides on CuInSe₂ are presented. During thermal oxidation of this ternary semiconductor, the composition and the electrical properties are controlled, primarily by the temperature and duration of oxidation treatment. The oxygen reacts principally with In, leaving the Cu and Se to readjust at the interface to form a Cu_xSe transition layer. The thermal oxide consists of an In₂O₃ matrix and having either inclusion of Cu or SeO₂ particles, depending on the precise formation conditions. The Cu_xSe transition layer eventually acts as a barrier that prevents further oxidation of the underlying CuInSe₂

Keywords

copper compounds; heat treatment; indium compounds; oxidation; ternary semiconductors; Cu_xSe transition layer; CuInSe₂; CuInSe₂ surface oxidation; In₂O₃ matrix; SeO₂ particles; composition control; electrical properties control; formation conditions; grown oxides; heat treatment; interface properties; native oxides; ternary semiconductor; thermal oxidation; thermal oxide; Chemistry; Copper; Crystal microstructure; Heat treatment; Indium; Oxidation; Scanning electron microscopy; Surface treatment; Temperature distribution; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654136

Filename

654136