Title :
The crucial effects of the micro-structure on the properties of Nc-Si:H films for solar cells
Author :
Gao, Xiao-Ni ; Yuan, Ning-Yi ; Ding, Jian-Ning ; Cheng, Guang-Gui ; Guo, Li-Qiang
Author_Institution :
Center of Micro/Nano Sci. & Technol., Jiangsu Univ., Zhenjiang, China
Abstract :
The intrinsic hydrogenated nano-crystalline silicon (nc-Si:H) films for p-i-n tandem solar cells have been deposited by plasma enhanced chemical vapor deposition (PECVD) assisted with direct current bias, and were investigated by four-point probe sheet resistance measurement, Raman and ultraviolet-visible (UV-VIS) transmission spectra. By varying technological conditions, the dependence of the conductivity and optical properties of nc-Si:H films on the micro-structure has been discussed. Results shows: well-fabricated structure of the films result in a small optical band-gap (Eg). When amorphous content, namely lattice disorder, increases, Eg gets big. Then qualitative and quantitative analysis has carried out to get that of micro-structure´s parameters, crystal volume (XC) influenced Eg more severely than crystalline size. With XC varied, Eg shows a contrary change trend correspondingly. And conductivity becomes high with well-ordered micro-structure, which is directly influenced by depositing time. Besides, with substrate temperature (TS) rising, the micro-structural properties have been improved.
Keywords :
Raman spectra; chemical vapour deposition; energy gap; hydrogen compounds; nanostructured materials; optical constants; plasma applications; silicon compounds; solar cells; Raman transmission spectra; intrinsic hydrogenated nano-crystalline silicon films; optical band-gap; p-i-n tandem solar cells; plasma enhanced chemical vapor deposition; probe sheet resistance measurement; substrate temperature rising; ultraviolet-visible transmission spectra; H film; band-gap; conductivity; micro-structure; nc-Si; optical property;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
DOI :
10.1109/NEMS.2010.5592498