Title :
The practical side of thin dielectric monitoring and characterization
Author :
Suehle, John S. ; Messick, Cleston ; Langley, Brian
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
The proper characterization and monitoring of gate dielectric reliability become critical functions in IC manufacturing and development as gate oxide thickness is scaled. Reliability engineers are faced with decisions concerning the test to use, the parameters of the test, test structure design, equipment, data analysis, and extrapolation to use conditions. This tutorial addresses many of these issues by providing examples of test structures, testing techniques, data analysis, and experimental case histories regarding long-term time-dependent dielectric breakdown (TDDB) testing, monitoring dielectric integrity via highly accelerated ramp tests, and characterizing plasma-induced damage
Keywords :
dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; IC manufacturing; accelerated ramp tests; data analysis; gate dielectric; integrity; monitoring; plasma-induced damage; reliability; testing; time-dependent dielectric breakdown; Data analysis; Data engineering; Design engineering; Dielectrics; Extrapolation; History; Manufacturing; Monitoring; Reliability engineering; Testing;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515818
