Tin sulphide films for solar cell application

Author

Reddy, N. Koteswara ; Reddy, K. T Ramakrishna

Author_Institution

Dept. of Phys., Sri Venkateswara Univ., Tirupati, India

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

515

Lastpage

518

Abstract

Thin films of SnS were prepared by spray pyrolysis on Corning 7059 glass substrates using temperatures, T_s, in the range, 200-425°C and keeping the other deposition parameters constant. For growth temperatures, T_s=300-360°C, the films showed only the SnS phase with a strong (111) orientation. The films formed at other temperatures showed additional phases with deviation from stoichiometry. All the films had p-type conductivity and the resistivity varied from 10 ³ to 10^-1 Ω-cm. The films had absorption coefficients greater than 10⁴ cm^-1 and the energy band gap of the stoichiometric films was about 1.32 eV. A heterojunction solar cell, n-CdS/p-SnS was produced with an efficiency of about 0.5%

Keywords

II-VI semiconductors; absorption coefficients; cadmium compounds; energy gap; p-n heterojunctions; pyrolysis; semiconductor thin films; solar cells; spray coating techniques; spray coatings; substrates; tin compounds; (111) orientation; 0.5 percent; 1.32 eV; 1E3 to 1E-1 ohmcm; 200 to 425 C; 300 to 360 C; CdS-SnS; CdS/SnS heterojunction solar cell; Corning 7059 glass substrates; absorption coefficients; deposition parameters; energy band gap; growth temperature; p-type conductivity; spray pyrolysis thin films; stoichiometric films; Absorption; Conductive films; Conductivity; Glass; Photonic band gap; Photovoltaic cells; Spraying; Sputtering; Temperature distribution; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654141

Filename

654141