Title :
Influence of the ultrasonic agitation on chemical bath deposition of cadmium sulfide thin films
Author :
Choi, Jun Young ; Kim, Iwng-jin ; Kim, Donghwan
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea
fDate :
Sept. 29 1997-Oct. 3 1997
Abstract :
Ultrasonic agitation was applied during the chemical bath deposition of CdS thin films. Ultrasonication resulted in a large difference in surface morphology, growth rate, and optical properties of CdS films. There were virtually no colloidal particles adsorbed on the surface. The surface roughness measured by atomic force microscopy was reduced by a factor of two. Band gap energy increased to 2.39 eV from 2.37 eV. X-ray patterns showed that the preferred orientation changed from hexagonal (002)/cubic (111) to hexagonal (101). Optical transmission improved in the longer wavelength range larger than 520 nm. The chemical reaction for CdS formation started at a lower temperature under ultrasonication, and dense films were obtained even when the chemical composition of the aqueous solution deviated far from the optimum conditions
Keywords :
II-VI semiconductors; atomic force microscopy; cadmium compounds; coating techniques; energy gap; light transmission; semiconductor growth; semiconductor thin films; surface topography; surface topography measurement; ultrasonic applications; CdS formation; CdS thin films; X-ray patterns; aqueous solution; atomic force microscopy; band gap energy; cadmium sulfide thin films; chemical bath deposition; chemical reaction; dense films; growth rate; optical properties; optical transmission; surface morphology; surface roughness measurement; ultrasonic agitation; ultrasonication; Atom optics; Atomic force microscopy; Atomic measurements; Chemicals; Force measurement; Optical films; Optical surface waves; Rough surfaces; Surface morphology; Surface roughness;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654147