Title :
Mobile ion contamination in CMOS circuits: a clear and present danger
Author :
Hance, Robert L. ; Erington, Kent ; Chonko, Mark A.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Austin, TX, USA
Abstract :
The struggle against positive mobile ionic contamination (PMIC) in integrated circuit devices continues in spite of the tremendous gains in the purity of semiconductor grade starting materials. As device geometries have decreased and levels of integration have increased, package types have multiplied. Highly sophisticated analytical techniques are required to unambiguously identify the specific ions causing a particular single transistor to fail. The monitoring of VLSI wafer manufacturing and packaging process steps to assure minimal residual positive ionic contaminants takes greater efforts as the level of device-killing contamination decreases. This tutorial presents analytical case studies for the unambiguous identification of failure-causing metal ionic contamination
Keywords :
CMOS integrated circuits; VLSI; failure analysis; integrated circuit manufacture; integrated circuit packaging; integrated circuit reliability; CMOS circuits; VLSI wafer manufacturing; device geometries; failure-causing metal ionic contamination; packaging process steps; positive mobile ionic contamination; semiconductor grade starting material purity; Condition monitoring; Contamination; Failure analysis; Geometry; Integrated circuit packaging; Manufacturing processes; Semiconductor device manufacture; Semiconductor device packaging; Semiconductor materials; Very large scale integration;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515819
