Photoluminescence study of highly efficient CdTe thin film solar cells

Author

Okamoto, T. ; Amin, N. ; Yamada, A. ; Konagai, M. ; Aramoto, T. ; Ohyama, H. ; Hanafusa, A. ; Murozono, M. ; Asomoza, R. ; Merkulov, A.

Author_Institution

Tokyo Inst. of Technol., Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

547

Lastpage

550

Abstract

Highly efficient CdTe thin film solar cells with a glass/CdS/CdTe/Cu-doped carbon/Ag structure, were characterized by low temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to V_Cd-Cl defect complexes appeared as a result of the CdCl₂ treatment. In the PL spectra of the heat-treated CdTe after the screen-printing of the Cu-doped carbon paste, a neutral-acceptor bound exciton (A_Cu⁰, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective accepters after the heat treatment. Furthermore, CdS/CdTe junction PL was measured, and two broad emissions at around 1.52 and 1.37 eV, lower than the PL peak energy in the CdTe surface, were observed. This result indicates that CdS_1-xTe_x mixed crystal layer was formed at the CdS/CdTe interface

Keywords

II-VI semiconductors; cadmium compounds; photoluminescence; semiconductor device testing; semiconductor thin films; solar cells; 1.37 eV; 1.42 eV; 1.53 eV; 1.59 eV; 16 percent; CdCl₂; CdCl₂ treatment; CdS-CdTe; CdS-CdTe thin-film solar cells; V_Cd-Cl defect complexes; accepters; heat treatment; low-temperature photoluminescence measurements; mixed crystal layer; neutral-acceptor bound exciton line; screen-printing; Atomic measurements; Energy measurement; Excitons; Glass; Heat treatment; Photoluminescence; Photovoltaic cells; Surface treatment; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654149

Filename

654149