Title :
Photoluminescence study of highly efficient CdTe thin film solar cells
Author :
Okamoto, T. ; Amin, N. ; Yamada, A. ; Konagai, M. ; Aramoto, T. ; Ohyama, H. ; Hanafusa, A. ; Murozono, M. ; Asomoza, R. ; Merkulov, A.
Author_Institution :
Tokyo Inst. of Technol., Japan
fDate :
29 Sep-3 Oct 1997
Abstract :
Highly efficient CdTe thin film solar cells with a glass/CdS/CdTe/Cu-doped carbon/Ag structure, were characterized by low temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd-Cl defect complexes appeared as a result of the CdCl2 treatment. In the PL spectra of the heat-treated CdTe after the screen-printing of the Cu-doped carbon paste, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective accepters after the heat treatment. Furthermore, CdS/CdTe junction PL was measured, and two broad emissions at around 1.52 and 1.37 eV, lower than the PL peak energy in the CdTe surface, were observed. This result indicates that CdS1-xTex mixed crystal layer was formed at the CdS/CdTe interface
Keywords :
II-VI semiconductors; cadmium compounds; photoluminescence; semiconductor device testing; semiconductor thin films; solar cells; 1.37 eV; 1.42 eV; 1.53 eV; 1.59 eV; 16 percent; CdCl2; CdCl2 treatment; CdS-CdTe; CdS-CdTe thin-film solar cells; VCd-Cl defect complexes; accepters; heat treatment; low-temperature photoluminescence measurements; mixed crystal layer; neutral-acceptor bound exciton line; screen-printing; Atomic measurements; Energy measurement; Excitons; Glass; Heat treatment; Photoluminescence; Photovoltaic cells; Surface treatment; Temperature measurement; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654149
