Title :
Properties of ZnO thin films for solar cells grown by chemical bath deposition
Author :
Ortega-Lopez, Mauricio ; Morales-Acevedo, Arturo
Author_Institution :
Dept. of Electr. Eng., Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City, Mexico
fDate :
29 Sep-3 Oct 1997
Abstract :
Thin films of ZnO were deposited by chemical bath deposition. The “as grown” films are amorphous or polycrystalline depending upon the chemical composition of the aqueous solution and the temperature used for their deposition. After a thermal annealing at temperatures above 300°C, the films undergo a chemical phase transformation becoming ZnO. The films before and after the annealing show a bandgap around 4.2 eV and 3.3 eV, respectively. The ZnO films were used to make solar cells on CuInS2 prepared by chemical spray pyrolysis. Under AM 1.5 illumination, these devices show a short-circuit current of the order of 10 mA/cm2, an open-circuit voltage of 350 mV and efficiency close to 2.2%
Keywords :
II-VI semiconductors; annealing; copper compounds; energy gap; indium compounds; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; spray coating techniques; spray coatings; ternary semiconductors; zinc compounds; 2.2 percent; 3.3 eV; 350 mV; 4.2 eV; ZnO-CuInS2 thin-film solar cells; ZnO-CuInSe2; bandgap; chemical bath deposition; chemical composition; chemical phase transformation; chemical spray pyrolysis; open-circuit voltage; short-circuit current; thermal annealing; Amorphous materials; Annealing; Chemicals; Photonic band gap; Photovoltaic cells; Spraying; Sputtering; Temperature dependence; Transistors; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654151
