Title :
Electrodeposited CuInSe2 thin film devices
Author :
Raffaelle, Ryne P. ; Mantovani, James G. ; Friedfeld, Robert B. ; Bailey, S.G. ; Hubbard, Seth M.
Author_Institution :
Dept. of Phys. & Space Sci., Florida Inst. of Technol., Melbourne, FL, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
The authors have been investigating the electrochemical deposition of thin films and junctions based on copper indium diselenide (CIS). CIS is considered to be one of the best absorber materials for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a simple and inexpensive method for producing thin-film CIS. They have produced both p and n type CIS thin films, as well as a CIS p-n junction electrodeposited from a single aqueous solution. Optical bandgaps were determined for these thin films using transmission spectroscopy. Current versus voltage characteristics were measured for Schottky barriers on the individual films and for the p-n junction
Keywords :
Schottky barriers; copper compounds; electrodeposition; electrodeposits; indium compounds; p-n heterojunctions; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; CuInSe2; CuInSe2 thin-film solar cells; I-V characteristics; Schottky barriers; absorber materials; aqueous solution; electrochemical deposition; optical bandgaps; p-n junction; transmission spectroscopy; Computational Intelligence Society; Copper; Indium; Optical films; Optical materials; P-n junctions; Photovoltaic systems; Solar power generation; Sputtering; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654152
