Title :
Nanoscale Si/SiO2 multilayer structures produced by plasma-chemical technology
Author :
Gismatulin, Andrei A. ; Kamaev, Genadii N. ; Antonenko, Alexander Kh ; Arzhannikova, Sofia A. ; Volodin, Vladimir A. ; Efremov, Mikhail D. ; Gileva, Anna S.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
Si-SiO2 multilayer nanoscale structures were obtained using a procedures of alpha-Si:H thin film depositions and subsequently plasma enhanced oxidation. Thus, a structure containing 6 layers of alpha-Si:H with thickness of 50 Aring, inserted between the layers of SiO2 with thickness 150 Aring has been created. The experimental setup with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The properties of the structures were investigated through the characteristics of MOS capacitors. Electrical measurements reveal significant peculiarities connected with charge transport through prepared multilayer nanoscale structures.
Keywords :
MOS capacitors; elemental semiconductors; multilayers; nanofabrication; nanostructured materials; oxidation; plasma materials processing; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; MOS capacitors; Si-SiO2; charge transport; electrical measurements; inductively coupled RF plasma; multilayer nanoscale structures; plasma enhanced oxidation; plasma-chemical technology; size 150 A; size 50 A; thin film; Apertures; Nanostructures; Nonhomogeneous media; Oxidation; Plasma measurements; Plasma properties; Plasma sources; Plasma transport processes; Radio frequency; Sputtering; ICP-CVD; Nanoscale Si-SiO2 layers; plasma enhanced oxidation;
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335629
