DocumentCode
2433562
Title
The decomposition mechanism of metastable solid GeO film
Author
Astankova, Kseniya N. ; Gorokhov, Eugenie B. ; Volodin, Vladimir A. ; Latyshev, Alexander V. ; Vergnat, Michel
Author_Institution
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2009
fDate
28-31 Oct. 2009
Firstpage
69
Lastpage
73
Abstract
The process of formation and decomposition of solid films of germanium monoxide from GeO vapor was studied using physical and chemical approaches. A model clarifying the metastability of solid GeO is developed. According the model, the structure of atomic orbitals (sigma- and n- bonds) of a GeO molecule causes the stability of GeO in gaseous phase. After condensation GeO(gas) harr GeO(solid), the atomic orbitals of Ge are transformed in lowest energy sp3-hybridized configuration, this configuration is universal both for Ge and for Ge02. The decomposition of GeO(solid) into Ge and GeO2 is caused by relaxation of deformation energy appearing due to big difference of Ge-Ge and Ge-O bond length.
Keywords
bond lengths; condensation; dielectric thin films; dissociation; germanium compounds; metastable states; solid-vapour transformations; thermodynamics; GeO; atomic orbitals; bond length; condensation; decomposition mechanism; deformation energy relaxation; germanium monoxide; metastable solid film; sp3-hybridized configuration; thermodynamical metastability; Crystallization; Germanium; Heating; Lattices; Metastasis; Semiconductor films; Seminars; Solid state circuits; Stability; Temperature; Germanium oxide; metastability; sp3-hybridization;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-5534-8
Type
conf
DOI
10.1109/INTERNANO.2009.5335633
Filename
5335633
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