DocumentCode :
2433562
Title :
The decomposition mechanism of metastable solid GeO film
Author :
Astankova, Kseniya N. ; Gorokhov, Eugenie B. ; Volodin, Vladimir A. ; Latyshev, Alexander V. ; Vergnat, Michel
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear :
2009
fDate :
28-31 Oct. 2009
Firstpage :
69
Lastpage :
73
Abstract :
The process of formation and decomposition of solid films of germanium monoxide from GeO vapor was studied using physical and chemical approaches. A model clarifying the metastability of solid GeO is developed. According the model, the structure of atomic orbitals (sigma- and n- bonds) of a GeO molecule causes the stability of GeO in gaseous phase. After condensation GeO(gas) harr GeO(solid), the atomic orbitals of Ge are transformed in lowest energy sp3-hybridized configuration, this configuration is universal both for Ge and for Ge02. The decomposition of GeO(solid) into Ge and GeO2 is caused by relaxation of deformation energy appearing due to big difference of Ge-Ge and Ge-O bond length.
Keywords :
bond lengths; condensation; dielectric thin films; dissociation; germanium compounds; metastable states; solid-vapour transformations; thermodynamics; GeO; atomic orbitals; bond length; condensation; decomposition mechanism; deformation energy relaxation; germanium monoxide; metastable solid film; sp3-hybridized configuration; thermodynamical metastability; Crystallization; Germanium; Heating; Lattices; Metastasis; Semiconductor films; Seminars; Solid state circuits; Stability; Temperature; Germanium oxide; metastability; sp3-hybridization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
Type :
conf
DOI :
10.1109/INTERNANO.2009.5335633
Filename :
5335633
Link To Document :
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