DocumentCode
2433587
Title
Improved μc-Si p-layer and a-Si i-layer materials using VHF plasma deposition
Author
Deng, X. ; Jones, S.J. ; Liu, T. ; Izu, M. ; Ovshinsky, S.R.
Author_Institution
Energy Conversion Devices Inc., Troy, MI, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
591
Lastpage
594
Abstract
Microcrystalline Si p-layers have been widely used in a-Si solar cell technology to achieve high efficiency. To improve the solar cell performance further, the authors have studied the deposition of high quality μc-Si p-layer material using a modified VHF plasma enhanced CVD process and consequently have improved the solar cell current. This improvement was primarily in the blue response which leads to a 6-10% improvement in the overall solar cell efficiency. In addition, they have explored the deposition of a-Si at high rates using VHF plasma and compared these VHF i-layers with RF plasma deposited i-layers. With improved deposition conditions, VHF intrinsic layers deposited at a rate up to 15 Å/s show similar device performance and light stability to VHF and RF i-layers deposited at low rates and show higher stability than RF i-layers deposited at high rates in the same deposition system. A 10.9% efficient single-junction solar cell was fabricated using a VHF deposited i-layer
Keywords
amorphous semiconductors; elemental semiconductors; p-n junctions; plasma CVD; plasma CVD coatings; semiconductor device testing; semiconductor thin films; silicon; solar cells; 10.9 percent; Si; VHF plasma enhanced CVD process; a-Si solar cells; amorphous i-layers; blue response; deposition conditions; device performance improvement; light stability; microcrystalline p-layers; single-junction solar cell fabrication; solar cell current; Conducting materials; Glass; Photovoltaic cells; Plasma applications; Plasma devices; Plasma materials processing; Plasma properties; Plasma stability; Radio frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654158
Filename
654158
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