Title :
Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier
Author :
Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim A. ; Kagadey, Valery A.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
Abstract :
In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.
Keywords :
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; gallium arsenide; impurities; ion implantation; semiconductor device models; semiconductor doping; GaAs; Schottky barrier; doping influence; field effect transistor; impurities concentration; ion-implanted MESFET; Charge carrier processes; Doping; Electron mobility; FETs; Gallium arsenide; Impurities; MESFETs; Schottky barriers; Semiconductor process modeling; Substrates; MESFET; TCAD; modeling;
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335637
