DocumentCode
2433643
Title
Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier
Author
Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim A. ; Kagadey, Valery A.
Author_Institution
Rzhanov Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
fYear
2009
fDate
28-31 Oct. 2009
Firstpage
53
Lastpage
55
Abstract
In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.
Keywords
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; gallium arsenide; impurities; ion implantation; semiconductor device models; semiconductor doping; GaAs; Schottky barrier; doping influence; field effect transistor; impurities concentration; ion-implanted MESFET; Charge carrier processes; Doping; Electron mobility; FETs; Gallium arsenide; Impurities; MESFETs; Schottky barriers; Semiconductor process modeling; Substrates; MESFET; TCAD; modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-5534-8
Type
conf
DOI
10.1109/INTERNANO.2009.5335637
Filename
5335637
Link To Document