Title :
Improving performance of superstrate p-i-n a-Si solar cells by optimization of n/TCO/metal back contacts
Author :
Hegedus, Steven S. ; Buchanan, Wayne A. ; Eser, Erten
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
A comprehensive study of the n-layer and back contact for superstrate (glass/textured SnO2-p-i-n/TCO/metal) a-Si solar cells is presented. In particular, the difference between a-Si and μc-Si n-layers are compared. These results show that the efficiency can be improved from 7% to 10% (absolute) by optimizing the back contact layers to incorporate a good optical back reflector. A rectifying contact is formed between the TCO and a-Si n-layer which reduces FF. A μc-Si n-layer eliminates the blocking n/TCO contact. Results suggest that the n/TCO interface has a controlling influence. ZnO gives ~1 mA/cm 2 higher Jsc compared to ITO. The best contacts are μc-Si/ZnO/metal
Keywords :
amorphous semiconductors; elemental semiconductors; optimisation; semiconductor device testing; semiconductor-metal boundaries; silicon; solar cells; Si; SnO2; ZnO; a-Si p-i-n solar cells; back contact layers optimisation; device performance improvement; fill factor; optical back reflector; rectifying contact; Absorption; Argon; Conductivity; Contacts; Glass; Indium tin oxide; Optical reflection; PIN photodiodes; Photovoltaic cells; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654161
