DocumentCode
2433662
Title
FEM simulation of piezoresistive pressure module
Author
Gridchin, Victor A. ; Chebanov, Michail A.
Author_Institution
Dept. of Semicond. devices & Microelectron., Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear
2009
fDate
28-31 Oct. 2009
Firstpage
44
Lastpage
46
Abstract
The impact of singularity points on stress distribution in piezoresistive module is investigated by means of FEM simulation. Strong influence of singularities on stress distribution in silicon-glass interface is presented in this paper.
Keywords
elemental semiconductors; finite element analysis; piezoresistive devices; pressure sensors; silicon; FEM simulation; Si; silicon piezoresistive pressure sensors; silicon-glass interface; stress distribution; Capacitive sensors; Glass; Mathematical model; Mechanical sensors; Piezoresistance; Piezoresistive devices; Seminars; Silicon; Stress; Temperature sensors; FEM simulation; pressure sensor; singular points;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-5534-8
Type
conf
DOI
10.1109/INTERNANO.2009.5335638
Filename
5335638
Link To Document