Title :
The influence of deformation on conductivity of Ga2O3-In2O3 thin films
Author :
Kozlov, Alexander G. ; Kurdyukova, Ekaterina A.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., SB RAS, Omsk, Russia
Abstract :
Thin films of Ga2O3-In2O3 are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.
Keywords :
deformation; electric resistance; electrical conductivity; gallium compounds; indium compounds; oxidation; piezoelectricity; semiconductor materials; semiconductor thin films; sputter deposition; stress effects; Ga2O3-In2O3; barrier conductivity; deformation; magnetron deposition; polycrystalline oxide semiconductor materials; resistance; strain effect; thermal oxidation; thin films; Capacitive sensors; Conductive films; Conductivity; Crystallization; Magnetic field induced strain; Semiconductor films; Semiconductor materials; Semiconductor thin films; Seminars; Substrates; Ga2O3-In2O3; conductivity; elastic stresses;
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335642
