Fabrication of MEH-PPV based organic light emitting diode and transistor

The potential of organic semiconductor based devices for light generation is demonstrated by the commercialisation of display technologies based on organic light emitting diode (OLED). In OLED, organic materials plays the role of emitting light once the current is passed through. However OLED have drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as a new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as to generate light. Different colours of light could be generated by using different types of organic material. The light emission could also be tuned and scanned in OLET. The studies carried out fabricated and analysed the current voltage and luminescence characteristics of both organic light emitting diode (OLED) and also organic light emitting transistor (OLET). The proposed light emitting layer in this study is poly [2-methoxy-5-(2´-ethyl-hexyloxy)-1, 4-phenylene vinylene] (MEH-PPV).