Fundamental problems of functioning the multielement CID photodetectors on the base of narrow-band semiconductors

Author

Vainer, Boris G.

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

31

Lastpage

33

Abstract

A review of the number of fundamental problems connected with functioning the multielement (linear and matrix) detectors of infrared radiation based on narrow-band semiconductors which are operating as a charge injection devices (CID) is given in this paper. Such questions as redundant lateral photo-sensitivity of CID elements, cross-talks, electric field instability of MIS structures, operation of photodetectors under the conditions of dynamic exposure, the spectral characteristic of detectors, etc. are discussed.

Keywords

MIS structures; charge injection; infrared detectors; narrow band gap semiconductors; optical crosstalk; photodetectors; MIS structure; charge injection devices; crosstalks; dynamic exposure; electric field instability; infrared radiation; multielement CID photodetectors; narrow-band semiconductors; redundant lateral photosensitivity; Charge coupled devices; Contacts; Electromagnetic wave absorption; Infrared detectors; Insulation; Narrowband; Photodetectors; Photonic band gap; Physics; Seminars; MIS structures; Narrow-band semiconductors; charge injection devices (CID); multielement IR detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335643

Filename

5335643