Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

The effects of ultra-thin GaNAs step graded layer sandwiched between GaInNAs well layer and GaAs barrier layer were fully investigated. Significant improvements were observed in the optical performance of the 1.3 μm range with the proposed GaNAs step graded layer structure. It was noticed that introducing GaNAs step graded layer extends efficiently the operational wavelength without changing the percentage of nitrogen composition in the GaInNAs quantum well while maintaining the same photoluminescence characteristics. Furthermore, the elongation of the lasing wavelength of the proposed device without a threshold penalty was also demonstrated by utilizing the GaNAs step graded layer.