DocumentCode
2433761
Title
Discrete two-electrode planar devices of nanoelectronics
Author
Bobrinetskii, I.I. ; Korneev, N.V. ; Nevolin, V.K.
Author_Institution
Moscow State Inst. of Electron. Eng., Russia
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
411
Lastpage
412
Abstract
The devices models created with the use of scanning probe microscopy (SPM) methods including planar models of nanodiodes are described. The devices are based on elements with nanometer dimensions (quasi-one-dimensional micro-contacts) that show nonlinear properties of conductance, including the phenomenon of resistance quantization at room temperature.
Keywords
diodes; microwave devices; nanotechnology; negative resistance devices; quantum wires; scanning probe microscopy; 0.2 mA; 10 GHz; SHF; SPM methods; Ti; ballistic quantum transport; discrete two-electrode planar devices; nanodiodes; nanoelectronic devices; nanometer dimensions; nonlinear conductance properties; quasi-one-dimensional microcontacts; room temperature resistance quantization; scanning probe microscopy; Charge carriers; Gallium arsenide; Geometry; Nanoelectronics; Nanoscale devices; Scanning probe microscopy; Surfaces; Temperature; Titanium; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1256162
Filename
1256162
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