Title :
Discrete two-electrode planar devices of nanoelectronics
Author :
Bobrinetskii, I.I. ; Korneev, N.V. ; Nevolin, V.K.
Author_Institution :
Moscow State Inst. of Electron. Eng., Russia
Abstract :
The devices models created with the use of scanning probe microscopy (SPM) methods including planar models of nanodiodes are described. The devices are based on elements with nanometer dimensions (quasi-one-dimensional micro-contacts) that show nonlinear properties of conductance, including the phenomenon of resistance quantization at room temperature.
Keywords :
diodes; microwave devices; nanotechnology; negative resistance devices; quantum wires; scanning probe microscopy; 0.2 mA; 10 GHz; SHF; SPM methods; Ti; ballistic quantum transport; discrete two-electrode planar devices; nanodiodes; nanoelectronic devices; nanometer dimensions; nonlinear conductance properties; quasi-one-dimensional microcontacts; room temperature resistance quantization; scanning probe microscopy; Charge carriers; Gallium arsenide; Geometry; Nanoelectronics; Nanoscale devices; Scanning probe microscopy; Surfaces; Temperature; Titanium; Wire;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1256162
