Title :
Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide
Author :
Lyamkina, Anna A. ; Dmitriev, Dmitriy V. ; Moshchenko, Sergey P. ; Galitsyn, Yuri G. ; Toropov, Alexander I.
Author_Institution :
Novosibirsk State Univ., Novosibirsk, Russia
Abstract :
In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 mum and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.
Keywords :
III-V semiconductors; decomposition; epitaxial growth; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; red shift; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; (001) gallium arsenide; GaAs; Gaussians decomposition analysis; InAs-GaAs; Stranski-Krastanov growth mode; elastic strain driven; indium arsenide heteroepitaxy growth mode; molecular beam epitaxy growth; optical property; photoluminescence; quantum dot fabrication; red shift; Capacitive sensors; Epitaxial growth; Gallium arsenide; Indium; Optical surface waves; Photoluminescence; Quantum dots; Seminars; Substrates; Wavelength measurement; Quantum dots; Stranski-Krastanov growth mode; droplet epitaxy;
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335644
