Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide

Author

Lyamkina, Anna A. ; Dmitriev, Dmitriy V. ; Moshchenko, Sergey P. ; Galitsyn, Yuri G. ; Toropov, Alexander I.

Author_Institution

Novosibirsk State Univ., Novosibirsk, Russia

fYear

2009

fDate

28-31 Oct. 2009

Firstpage

21

Lastpage

23

Abstract

In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 mum and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.

Keywords

III-V semiconductors; decomposition; epitaxial growth; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; red shift; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; (001) gallium arsenide; GaAs; Gaussians decomposition analysis; InAs-GaAs; Stranski-Krastanov growth mode; elastic strain driven; indium arsenide heteroepitaxy growth mode; molecular beam epitaxy growth; optical property; photoluminescence; quantum dot fabrication; red shift; Capacitive sensors; Epitaxial growth; Gallium arsenide; Indium; Optical surface waves; Photoluminescence; Quantum dots; Seminars; Substrates; Wavelength measurement; Quantum dots; Stranski-Krastanov growth mode; droplet epitaxy;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5534-8

Type

conf

DOI

10.1109/INTERNANO.2009.5335644

Filename

5335644