DocumentCode
2433779
Title
Photoluminescence study of energy levels in Ge quantum dots in Si
Author
Shklyaev, Alexander A. ; Gorbunov, Andrei V. ; Ichikawa, Masakazu
Author_Institution
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2009
fDate
28-31 Oct. 2009
Firstpage
24
Lastpage
26
Abstract
We study the influence of the technological parameters on photoluminescence properties of Ge quantum dots in a Si matrix. We found growth and annealing conditions which provide the formation of Ge quantum dots with two energy levels.
Keywords
annealing; elemental semiconductors; germanium; photoluminescence; semiconductor growth; semiconductor quantum dots; silicon; Ge-Si; annealing conditions; energy levels; photoluminescence; quantum dot growth; technological parameters; Annealing; CMOS technology; Energy states; Fabrication; Infrared detectors; Nanoscale devices; Photoluminescence; Quantum computing; Quantum dots; Silicon; Ge/Si; photolumi-nescence (PL); quantum dots (QD);
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-5534-8
Type
conf
DOI
10.1109/INTERNANO.2009.5335645
Filename
5335645
Link To Document