Title :
Photoluminescence study of energy levels in Ge quantum dots in Si
Author :
Shklyaev, Alexander A. ; Gorbunov, Andrei V. ; Ichikawa, Masakazu
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
Abstract :
We study the influence of the technological parameters on photoluminescence properties of Ge quantum dots in a Si matrix. We found growth and annealing conditions which provide the formation of Ge quantum dots with two energy levels.
Keywords :
annealing; elemental semiconductors; germanium; photoluminescence; semiconductor growth; semiconductor quantum dots; silicon; Ge-Si; annealing conditions; energy levels; photoluminescence; quantum dot growth; technological parameters; Annealing; CMOS technology; Energy states; Fabrication; Infrared detectors; Nanoscale devices; Photoluminescence; Quantum computing; Quantum dots; Silicon; Ge/Si; photolumi-nescence (PL); quantum dots (QD);
Conference_Titel :
Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies, 2009. INTERNANO 2009. International School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5534-8
DOI :
10.1109/INTERNANO.2009.5335645
