Title :
Manufacturing and research of transistors with resonance tunneling
Author :
Dorofeev, A.A. ; Matveev, Y.A. ; Cherniavski, A.A.
Author_Institution :
SPF Omega-microwave, SPP Pulsar, Moscow, Russia
Abstract :
The paper defines the construction of a resonant-tunneling transistor (RTT), optimised for practical realization. The technology has been worked out and the RTT samples have been produced. Their static and dynamic performances as well as the working band have been analyzed. It has been shown that the devices are efficient up to 21 GHz.
Keywords :
microwave transistors; resonant tunnelling transistors; 21 GHz; RTT; SHF; dynamic performance; resonant-tunneling transistor; static performance; Chromium; Current-voltage characteristics; Gallium arsenide; Helium; Indium tin oxide; Manufacturing; Microwave transistors; Organizing; Resonance; Tunneling;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1256163
