DocumentCode
2433787
Title
Manufacturing and research of transistors with resonance tunneling
Author
Dorofeev, A.A. ; Matveev, Y.A. ; Cherniavski, A.A.
Author_Institution
SPF Omega-microwave, SPP Pulsar, Moscow, Russia
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
413
Lastpage
414
Abstract
The paper defines the construction of a resonant-tunneling transistor (RTT), optimised for practical realization. The technology has been worked out and the RTT samples have been produced. Their static and dynamic performances as well as the working band have been analyzed. It has been shown that the devices are efficient up to 21 GHz.
Keywords
microwave transistors; resonant tunnelling transistors; 21 GHz; RTT; SHF; dynamic performance; resonant-tunneling transistor; static performance; Chromium; Current-voltage characteristics; Gallium arsenide; Helium; Indium tin oxide; Manufacturing; Microwave transistors; Organizing; Resonance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1256163
Filename
1256163
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