Title :
Investigation of the single-electron transistors based on aluminum and its oxides
Author :
Abramov, I.I. ; Novik, E.G.
Author_Institution :
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia
Abstract :
An investigation of the operation characteristics (temperature of operation, frequency limit) and current-voltage characteristics of single-electron transistors based on aluminum and its oxides was carried out. A proposed estimation method of the operation characteristics, two-dimensional numerical model and single-electron device simulator SET-NANODEV were used for these investigations.
Keywords :
MIM devices; aluminium; aluminium compounds; microwave transistors; single electron transistors; 2D numerical modelling; Al-AlO-Al; Al/AlO/sub x//Al structure; I-V characteristics; SET-NANODEV; current-voltage characteristics; estimation method; frequency limit; operation characteristics; operation temperature; single-electron device simulator; single-electron transistors; two-dimensional numerical model; Aluminum; Artificial intelligence; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Niobium; Organizing; Single electron transistors;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1256164
