DocumentCode
2433812
Title
Investigation of the single-electron transistors based on aluminum and its oxides
Author
Abramov, I.I. ; Novik, E.G.
Author_Institution
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
415
Lastpage
417
Abstract
An investigation of the operation characteristics (temperature of operation, frequency limit) and current-voltage characteristics of single-electron transistors based on aluminum and its oxides was carried out. A proposed estimation method of the operation characteristics, two-dimensional numerical model and single-electron device simulator SET-NANODEV were used for these investigations.
Keywords
MIM devices; aluminium; aluminium compounds; microwave transistors; single electron transistors; 2D numerical modelling; Al-AlO-Al; Al/AlO/sub x//Al structure; I-V characteristics; SET-NANODEV; current-voltage characteristics; estimation method; frequency limit; operation characteristics; operation temperature; single-electron device simulator; single-electron transistors; two-dimensional numerical model; Aluminum; Artificial intelligence; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Niobium; Organizing; Single electron transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1256164
Filename
1256164
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