DocumentCode
2433831
Title
Material influence on frequency characteristics of quantum interference T-transistors
Author
Abramov, I.I. ; Rogachov, A.I.
Author_Institution
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
421
Lastpage
422
Abstract
Modeling results of frequency characteristics of quantum interference transistors based on different semiconductor materials are presented. It was shown that structures based on GaSb and GaP have the maximum working frequency more than 5 THz in contrast to other ones. Also some modifications have been added to a well-known model.
Keywords
quantum interference devices; semiconductor device models; semiconductor materials; submillimetre wave transistors; 5 THz; GaP; GaSb; THF; frequency characteristics; material influence; modeling; quantum interference T-transistors; semiconductor materials; Frequency; Gallium arsenide; Helium; IEEE catalog; Indium phosphide; Indium tin oxide; Interference; Microwave technology; Organizing; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1256166
Filename
1256166
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