Title :
Material influence on frequency characteristics of quantum interference T-transistors
Author :
Abramov, I.I. ; Rogachov, A.I.
Author_Institution :
Belarussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia
Abstract :
Modeling results of frequency characteristics of quantum interference transistors based on different semiconductor materials are presented. It was shown that structures based on GaSb and GaP have the maximum working frequency more than 5 THz in contrast to other ones. Also some modifications have been added to a well-known model.
Keywords :
quantum interference devices; semiconductor device models; semiconductor materials; submillimetre wave transistors; 5 THz; GaP; GaSb; THF; frequency characteristics; material influence; modeling; quantum interference T-transistors; semiconductor materials; Frequency; Gallium arsenide; Helium; IEEE catalog; Indium phosphide; Indium tin oxide; Interference; Microwave technology; Organizing; Tellurium;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1256166
