DocumentCode :
2433850
Title :
Modeling of static characteristics of resonant-tunneling structures
Author :
Obukhov, I.A.
Author_Institution :
Interface Ltd., Moscow, Russia
fYear :
2000
fDate :
11-15 Sept. 2000
Firstpage :
423
Lastpage :
427
Abstract :
The model for the calculation of static characteristics of Resonant-Tunneling Structures (RTS) and Resonant-Tunneling Diodes (RTD) adequately for experimental purposes are presented.
Keywords :
microwave diodes; resonant tunnelling devices; resonant tunnelling diodes; semiconductor device models; RTD modeling; charge transport model; resonant-tunneling diodes; resonant-tunneling structures; static characteristics modelling; Bismuth; Helium; IEEE catalog; Indium tin oxide; Microwave technology; Organizing; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
Type :
conf
DOI :
10.1109/CRMICO.2000.1256167
Filename :
1256167
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2433850
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