Spectral examination of the "loading" effect while removing the photoresist coatings from the substrate surfaces in the microwave plasma discharge

The experimental results of examination of optical emission of a microwave plasma discharge in oxygen, performed in order to determine the spectral lines, specific to the process of the plasma chemical removal of the photoresist masks, are presented. It is determined, that due to the specific manifestation of the "loading" effect when processing the silicon substrates in the microwave plasma discharge, the control of process of photoresist removing from small batches of substrates is expedient to be carried out by controlling the intensity of the strip CO (/spl lambda/=519.82 nm). In the case of processing the large quantity of substrates the control should be carried out by the line O I (/spl lambda/=777.7 nm; /spl lambda/=844.6 nm).