Preparation of high-quality μc-Si:H films by a hydrogen-radical CVD method [solar cells]

Author

Lo, Liang-Fu ; Hatta, Maki ; Andoh, Nobuyuki ; Nagayoshi, Hiroshi ; Kamisako, Koichi

Author_Institution

Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

651

Lastpage

654

Abstract

Undoped, phosphorus-, and boron-doped microcrystalline silicon (μc-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of μc-Si:H films were investigated. Doped μc-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9

Keywords

CVD coatings; chemical vapour deposition; elemental semiconductors; hydrogen; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; μc-Si:H solar cell; Raman spectrum; Si:H; crystalline volume fraction; deposition conditions; deposition rate; electrical properties; hydrogen-radical CVD method; optical properties; structural properties; thin film preparation; Chemical vapor deposition; Conducting materials; Conductive films; Conductivity; Hydrogen; Optical films; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654173

Filename

654173