Title :
Preparation of high-quality μc-Si:H films by a hydrogen-radical CVD method [solar cells]
Author :
Lo, Liang-Fu ; Hatta, Maki ; Andoh, Nobuyuki ; Nagayoshi, Hiroshi ; Kamisako, Koichi
Author_Institution :
Fac. of Technol., Tokyo Univ. of Agric. & Technol., Japan
fDate :
29 Sep-3 Oct 1997
Abstract :
Undoped, phosphorus-, and boron-doped microcrystalline silicon (μc-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of μc-Si:H films were investigated. Doped μc-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9
Keywords :
CVD coatings; chemical vapour deposition; elemental semiconductors; hydrogen; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; μc-Si:H solar cell; Raman spectrum; Si:H; crystalline volume fraction; deposition conditions; deposition rate; electrical properties; hydrogen-radical CVD method; optical properties; structural properties; thin film preparation; Chemical vapor deposition; Conducting materials; Conductive films; Conductivity; Hydrogen; Optical films; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654173
