DocumentCode
2433949
Title
Effect of purity of the starting materials on the parameters of epitaxial GaAs, produced by MOCVD-method
Author
Devyatykh, G.G. ; Moiseev, A.N. ; Chilyasov, A.V. ; Kotkov, A.P. ; Ivanov, V.A. ; Vasiliev, L.S.
Author_Institution
Inst. of Chem. of High-Purity Substances, Acad. of Sci., Nizhny Novgorod, Russia
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
441
Lastpage
442
Abstract
High-purity arsine and trimethylgallium are used to produce A/sup 3/B/sup 5/ epitaxial layers by MOCVD-method for application in microwave devices and in optoelectronics. The present work is aimed to investigate the effect of purity of the starting materials on the electrophysical parameters of epitaxial gallium arsenide, produced by MOCVD-method, as well as to develop the technology for the production of high-purity arsine and TMG.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; GaAs; MOCVD growth; arsine; electrophysical parameters; gallium arsenide epitaxial layer; starting material purity; trimethylgallium; Bismuth; Chromium; Gallium arsenide; Helium; Independent component analysis; Iron; Microwave technology; Organizing; Purification; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1256174
Filename
1256174
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