Title :
The growth of SiC micro-pillar array by vapor-liquid-solid mechanism
Author :
Chen, Yi F. ; Liu, Xing Z. ; Deng, Xin W. ; Li, Yan R.
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition (CVD). Silane and acetylene were used as the source gas. The arrays of circular features were fabricated on Si substrate by ion beam etching. Then nickel as the catalyst was filled into the features by electroplating. 3C-SiC micro-pillar arrays were selective grown in the circular features via the vapor-liquid-solid (VLS) process. The morphology, structure and stoichiometry of the SiC micro-pillar arrays were studied.
Keywords :
catalysis; chemical vapour deposition; crystal morphology; electroplating; etching; ion beam effects; semiconductor growth; silicon compounds; stoichiometry; wide band gap semiconductors; CVD; IV-IV compound semiconductor material; Si; SiC; acetylene; catalysis; chemical vapor deposition; electroplating; gas source; high-power condition; high-radiation condition; high-temperature condition; ion beam etching; micro-pillar array; morphology; semiconductor electronic circuits; semiconductor electronic devices; semiconductor growth; silane; silicon carbide; stoichiometry; vapor-liquid-solid mechanism; wide band gap semiconductors; 3C-SiC; CVD; VLS; micro-pillar;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
DOI :
10.1109/NEMS.2010.5592539
