The growth of SiC micro-pillar array by vapor-liquid-solid mechanism

Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition (CVD). Silane and acetylene were used as the source gas. The arrays of circular features were fabricated on Si substrate by ion beam etching. Then nickel as the catalyst was filled into the features by electroplating. 3C-SiC micro-pillar arrays were selective grown in the circular features via the vapor-liquid-solid (VLS) process. The morphology, structure and stoichiometry of the SiC micro-pillar arrays were studied.