DocumentCode :
243399
Title :
Development of new four-terminal, dual junction solar cell materials to overcome the Shockley-Queisser Limit
Author :
Wangperawong, Artit
Author_Institution :
Dept. of Electr. Eng., Univ. of Technol. Thonburi, Bangkok, Thailand
fYear :
2014
fDate :
22-25 Oct. 2014
Firstpage :
1
Lastpage :
4
Abstract :
Engineers and scientists currently know how to make silicon solar cells that are 25% efficient. This achievement has nearly reached the theoretical maximum (29%) for a single junction solar cell. How do we go beyond 29%? In order to continue reducing the costs of solar power generation, higher performance devices are necessary. Here we briefly present possible strategies along with their implementations to go beyond the Shockley-Queisser Limit. Two new materials-CZTS and SnS - are being developed for use in four-terminal, dual junction devices.
Keywords :
copper compounds; elemental semiconductors; semiconductor junctions; silicon; solar cells; tin compounds; zinc compounds; Cu2ZnSnS4; Shockley-Queisser limit; Si; SnS; cost reduction; four-terminal dual junction solar cell materials; higher performance devices; silicon solar cells; single junction solar cell; solar power generation; Junctions; Photovoltaic cells; Photovoltaic systems; Silicon; Substrates; CZTS; SnS; efficiency; photovoltaics; solar cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2014 - 2014 IEEE Region 10 Conference
Conference_Location :
Bangkok
ISSN :
2159-3442
Print_ISBN :
978-1-4799-4076-9
Type :
conf
DOI :
10.1109/TENCON.2014.7022495
Filename :
7022495
Link To Document :
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