• DocumentCode
    2434158
  • Title

    High aspect ratio 3-D electroplating assisted by localized laser irradiation

  • Author

    Park, Jungwoo ; Kim, Hanseup

  • Author_Institution
    Dept. of Electr. & Comput., Univ. of Utah, Salt Lake City, UT, USA
  • fYear
    2010
  • fDate
    20-23 Jan. 2010
  • Firstpage
    1120
  • Lastpage
    1123
  • Abstract
    We report a high-aspect ratio electroplating technique that is assisted by focused laser irradiation to construct further narrow and tall three-dimensional (3-D) microstructures. Focused laser irradiation strengthens localized electrical field near the focal spot, thus enabling faster nucleation of ions and construction of higher aspect ratio pillars than typical chemical electroplating. We compared electroplating properties with and without laser irradiation, by investigating the profile, speed, and material elements of the fabricated microstructures. Laser-assisted electroplating enhanced the basement deposition speed by 31% to 1.7 nm/s from the 1.3 nm/s of the traditional electrochemical deposition without laser irradiation under a low current density (4 mA/cm2). This technique allowed vertical pillars to grow in a reduced diameter of 85 urn, which is down by 20% compared to the diameter of 110 urn without laser assistance. The electroplated nickel pillars have resulted in 24% less oxygen in the final structures showing the improved homogeneity of materials. Lateral nickel branches are also produced with a higher deposition rate than traditional method.
  • Keywords
    crystal microstructure; electrochemistry; electroplating; laser beam effects; nucleation; optical self-focusing; 3D electroplating; electrochemical deposition; electroplated nickel pillars; focal spot; focused laser irradiation; high-aspect ratio electroplating; ion nucleation; laser assisted electroplating; localized electrical field; localized laser irradiation; three-dimensional microstructures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
  • Conference_Location
    Xiamen
  • Print_ISBN
    978-1-4244-6543-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2010.5592549
  • Filename
    5592549