DocumentCode
2434232
Title
Texture etched Al-doped ZnO: a new material for enhanced light trapping in thin film solar cells
Author
Kluth, O. ; Löffl, A. ; Wieder, S. ; Benekíng, C. ; Appenzeller, W. ; Houben, L. ; Rech, B. ; Wagner, H. ; Hoffmann, S. ; Waser, R. ; Selvan, J. A Anna ; Keppner, H.
Author_Institution
Forschungszentrum Julich GmbH, Germany
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
715
Lastpage
718
Abstract
We found that sputtered ZnO:Al films with an appropriate compact structure develop a surface texture during etching in diluted HCl with excellent optical and light trapping properties. Moreover, these texturable films have a high optical transmission and good electrical properties which are not affected by the etching process. An analysis of the film structure by HRSEM is presented. High short-circuit currents have been achieved for a-Si:H solar cells incorporating these films as TCO substrates
Keywords
aluminium; amorphous semiconductors; hydrogen; light transmission; semiconductor thin films; short-circuit currents; silicon; solar cells; sputtered coatings; surface texture; zinc compounds; Si:H; TCO substrates; ZnO:Al; a-Si:H solar cells; diluted HCl; enhanced light trapping; film structure analysis; good electrical properties; high optical transmission; high short-circuit currents; light trapping properties; optical properties; sputtered ZnO:Al films; surface texture; texture etched ZnO:Al films; thin film solar cells; transparent conducting oxide; Human computer interaction; Optical films; Optical scattering; Photovoltaic cells; Sputter etching; Sputtering; Substrates; Surface morphology; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654189
Filename
654189
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