Title :
Poly-silicon thin films and solar cells prepared by rapid thermal CVD
Author :
Zhao, Yuwen ; Jiang, Xinian ; Wang, Wenjing ; Li, Zhongming ; Yu, Yuan ; Liao, Xianbo
Author_Institution :
Beijing Solar Energy Res. Inst., China
fDate :
29 Sep-3 Oct 1997
Abstract :
Polycrystalline silicon (poly-Si) films (10-20 μm) were grown from SiH2Cl2 or SiCl4 by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (Ts) of above 1030°C. The average grain size and carrier mobility of the films were found to be dependent on Ts and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm2, 25°C)
Keywords :
CVD coatings; carrier mobility; chemical vapour deposition; elemental semiconductors; grain size; semiconductor device testing; semiconductor thin films; silicon; solar cells; 10 to 20 mum; 25 C; 9.88 percent; Si; carrier mobility; energy conversion efficiency; grain size; growth rate; poly-Si thin-film solar cells; rapid thermal chemical vapor deposition; substrate materials; substrate temperature; Grain size; Inductors; Optical films; Optical microscopy; Photovoltaic cells; Scanning electron microscopy; Semiconductor films; Silicon; Substrates; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654193
