Title :
High rate deposition of silicon films for solar cells by plasma-enhanced CVD from trichlorosilane
Author :
Rostalsky, Martin ; Kunze, Thomas ; Linke, Nicole ; Muller, Jorg
Author_Institution :
Dept. of Semicond. Technol., Tech. Univ. Hamburg-Harburg, Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
This paper describes a high rate deposition process of silicon films by means of plasma-enhanced chemical vapor deposition (PECVD) from trichlorosilane (SiHCl3) at low temperatures on graphite substrates. The PECVD-process was investigated for different parameters such as gas composition of SiHCl3, H2 and Ar, pressure, substrate temperature and RF-power. The deposited films are investigated by energy disperse X-ray analysis to determine the fraction of incorporated chlorine, scanning electron microscopy to characterize the morphology of the film surface, X-ray diffraction to ascertain crystallinity and others. Special interest is paid to the films behavior in a rapid thermal zone melting process to enlarge the grain size for photovoltaic applications
Keywords :
X-ray analysis; X-ray diffraction; elemental semiconductors; grain size; plasma CVD; plasma CVD coatings; scanning electron microscopy; semiconductor device testing; semiconductor thin films; silicon; solar cells; zone melting; Si; Si thin-film solar cells; X-ray diffraction; crystallinity; deposition rate; energy disperse X-ray analysis; film surface morphology; gas composition; grain size enlargement; graphite substrates; photovoltaic applications; plasma-enhanced CVD; rapid thermal zone melting process; scanning electron microscopy; trichlorosilane; Argon; Chemical vapor deposition; Electrons; Grain size; Photovoltaic cells; Plasma chemistry; Plasma temperature; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654196
