• DocumentCode
    2434495
  • Title

    Thin, substrate-based crystalline silicon solar cells with no grid shading

  • Author

    Aiken, Daniel J. ; Barnett, Allen M.

  • Author_Institution
    Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
  • fYear
    1997
  • fDate
    29 Sep-3 Oct 1997
  • Firstpage
    763
  • Lastpage
    766
  • Abstract
    Two major opportunities for increasing the performance of present day silicon solar cells involve reducing both the thickness and the grid shading. The ideal silicon photovoltaic device will be 20-100 μm thick, will incorporate light trapping, and will not be shaded by contact metallization. Practicality also requires that these devices be supported by a low cost substrate. For the first time, a thin, substrate-based crystalline silicon solar cell has been designed and fabricated with no grid shading. Contacts are sandwiched between a supportive silicon substrate and a 40 μm thick active silicon device layer. Device results include a 535 mV Voc, and negligible shunt conductance and series resistance
  • Keywords
    elemental semiconductors; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 40 mum; 535 mV; Si; active silicon device layer; epitaxial layers; light trapping; liquid phase epitaxy; low cost substrate; performance improvement; substrate-based crystalline silicon solar cells; thin Si solar cells; Absorption; Costs; Crystalline materials; Crystallization; Metallization; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3767-0
  • Type

    conf

  • DOI
    10.1109/PVSC.1997.654201
  • Filename
    654201