DocumentCode
2434495
Title
Thin, substrate-based crystalline silicon solar cells with no grid shading
Author
Aiken, Daniel J. ; Barnett, Allen M.
Author_Institution
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
763
Lastpage
766
Abstract
Two major opportunities for increasing the performance of present day silicon solar cells involve reducing both the thickness and the grid shading. The ideal silicon photovoltaic device will be 20-100 μm thick, will incorporate light trapping, and will not be shaded by contact metallization. Practicality also requires that these devices be supported by a low cost substrate. For the first time, a thin, substrate-based crystalline silicon solar cell has been designed and fabricated with no grid shading. Contacts are sandwiched between a supportive silicon substrate and a 40 μm thick active silicon device layer. Device results include a 535 mV Voc, and negligible shunt conductance and series resistance
Keywords
elemental semiconductors; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; silicon; solar cells; substrates; 40 mum; 535 mV; Si; active silicon device layer; epitaxial layers; light trapping; liquid phase epitaxy; low cost substrate; performance improvement; substrate-based crystalline silicon solar cells; thin Si solar cells; Absorption; Costs; Crystalline materials; Crystallization; Metallization; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654201
Filename
654201
Link To Document