DocumentCode
2434573
Title
Fabrication of high stabilized efficiency a-Si solar cells by using SiH2Cl2 addition
Author
Dairiki, Koji ; Yamada, Akira ; Konagai, Makoto ; Merkulov, A. ; Asomoza, Rene
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
779
Lastpage
782
Abstract
We have applied SiH2Cl2 addition together with H2 dilution to a-Si:H films and solar cells fabricated by mercury-sensitized photo-CVD. It was observed by SIMS measurements that Cl was incorporated into a-Si:H films over 1018 atom/cm 3, even at the flow rate ratio of 0.01(SiH2Cl2 to SiH4). Furthermore, it was found that excess Cl incorporated in a-Si:H films had been removed by H2 dilution. With H2 dilution, we could control the excess acceptor states of a-Si:H films grown by SiH2Cl 2 addition and when we applied them to the i-layer of a-Si solar cells, quantum efficiencies increased at all wavelength region and especially at middle wavelength region which is sensible to the electric field weakening of the i-layer by light induced degradation. As a result, we have achieved a high stabilized efficiency of 9.0% for an 1 cm2 single-junction a-Si:H solar cell
Keywords
CVD coatings; amorphous semiconductors; elemental semiconductors; hydrogen; impurity states; semiconductor growth; semiconductor thin films; silicon; solar cells; 9 percent; H2 dilution; Si; Si:H; SiH2Cl2; SiH2Cl2 addition; a-Si solar cells; a-Si:H films; electric field weakening; excess acceptor states control; flow rate ratio; high stabilized efficiency; i-layer; light induced degradation; mercury-sensitized photo-CVD; quantum efficiencies; single-junction a-Si:H solar cell; Agricultural engineering; Atomic measurements; Density measurement; Fabrication; Fluid flow measurement; Glass; Hydrogen; Lighting control; Photovoltaic cells; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654205
Filename
654205
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