DocumentCode :
2434772
Title :
Internal profile reconstruction for MEMS microstructures based on infrared transmission technology
Author :
Liu, Yi ; Xue, Chenyang ; Chou, Xiujian ; Niu, Kangkang ; Liu, Jun
Author_Institution :
Key Lab. of Instrum. Sci. & Dynamic Meas., North Univ. of China, Taiyuan, China
fYear :
2010
fDate :
20-23 Jan. 2010
Firstpage :
1029
Lastpage :
1032
Abstract :
The measurement system based on white light interference technology is proposed for the internal profile measurement of standard GaAs step micro structures. It is extended from white light interference measurement to the infrared light transmission interference measurement. Comparing with measurement results in reflection interference and infrared transmission interference experiments, the whole system including algorithm is feasible for the resolution of internal profile of micro structures. Measurement resolution can reach micron level on lateral and nanometer on axial direction. The system, which can basically realize the transmission measurement of micro structures, has the potential application in the sidewall and bottom profile measurement of micro structures with high aspect ratio.
Keywords :
gallium arsenide; light interference; micromechanical devices; reflection; GaAs; GaAs step microstructure; MEMS microstructure; infrared transmission technology; internal profile measurement; internal profile reconstruction; reflection interference; transmission interference measurement; white light interference technology; high aspect ratio; transmission interference; vertical scanning interferometry; white-light interference;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
Type :
conf
DOI :
10.1109/NEMS.2010.5592581
Filename :
5592581
Link To Document :
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