DocumentCode
2435196
Title
Enhanced degradation of nMOSFET´s under hot carrier stress at elevated temperatures due to the length of velocity saturation region
Author
Hwang, Hyunsang ; Goo, Jung-Suk ; Kwon, Hoyup ; Shin, Hyungsoon
Author_Institution
Goldstar Electron, Seoul, South Korea
fYear
1994
fDate
16-19 Oct 1994
Firstpage
69
Lastpage
72
Abstract
The anomalous behavior of nMOSFET´s hot carrier reliability characteristics have been investigated at an elevated temperature. We found that degradations of saturation drain current and ring oscillator falling time are enhanced at high temperature. This anomalous behavior causes a significantly impact on the device reliability for future deep submicron devices at high operating temperatures
Keywords
MOSFET; hot carriers; semiconductor device reliability; deep submicron devices; degradation; device reliability; elevated temperatures; hot carrier stress; nMOSFETs; ring oscillator; saturation drain current; velocity saturation; Degradation; Electrons; Hot carriers; Interface states; Inverters; MOSFET circuits; Ring oscillators; Stress; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-1908-7
Type
conf
DOI
10.1109/IRWS.1994.515829
Filename
515829
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