Title :
Enhanced degradation of nMOSFET´s under hot carrier stress at elevated temperatures due to the length of velocity saturation region
Author :
Hwang, Hyunsang ; Goo, Jung-Suk ; Kwon, Hoyup ; Shin, Hyungsoon
Author_Institution :
Goldstar Electron, Seoul, South Korea
Abstract :
The anomalous behavior of nMOSFET´s hot carrier reliability characteristics have been investigated at an elevated temperature. We found that degradations of saturation drain current and ring oscillator falling time are enhanced at high temperature. This anomalous behavior causes a significantly impact on the device reliability for future deep submicron devices at high operating temperatures
Keywords :
MOSFET; hot carriers; semiconductor device reliability; deep submicron devices; degradation; device reliability; elevated temperatures; hot carrier stress; nMOSFETs; ring oscillator; saturation drain current; velocity saturation; Degradation; Electrons; Hot carriers; Interface states; Inverters; MOSFET circuits; Ring oscillators; Stress; Temperature dependence; Temperature measurement;
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
DOI :
10.1109/IRWS.1994.515829
