Title :
A microstrip-line microwave interferometer for monitoring of plasma density of processing plasmas
Author :
Hsieh, C.H. ; Liang, Y.W. ; Lin, C. ; Leou, Keh-Chyang
Author_Institution :
Eng. & Syst. Sci. Dept., Nat. Tsing Hua Univ., Hsinchu
Abstract :
Summary form only given. We developed a planar transmission-line microwave interferometer for monitoring of electron density for applications in process real-time feedback control of plasma based semiconductor fabrication tools, such plasma etchers or PECVDs. The principle of this technique is the same as the conventional microwave interferometers except that the sensing microwave propagates along a transmission line structure. In this study, the sensor was a microstrip transmission-line where microwave propagates at a phase velocity determined by the structure and the electron density of the surrounding plasma. Thus the variation of plasma density can be estimated from the phase shift of the transmitted microwave from one to the other end of the transmission-line. Compared to the conventional microwave interferometers where line-averaged plasma density is measured, the transmission-line type microwave sensor will be less susceptive to the interference caused by multi-passes reflection/refraction effect resulting from nonuniformity of the plasma density profiles. Therefore, it provides a measurement of higher sensitivity and wider dynamic range. In this work, an U-shaped transmission line with 3 mm in width and 86 mm in length, the quartz based substrate thickness is 3.5 mm, and the distance between input and output ports is 23 mm. The dispersion characteristics of this microstrip line immersed in a plasma of different electron densities was simulated by using a commercial tool, High Frequency Structure Simulation code (Ansoft HFSS), a full- wave electromagnetic simulator using the finite element method. The simulation results show that the phase shift increases gradually with the plasma electron density with a sensitivity 12 degree / 1010 cm"3. Experimental demonstration has been performed with an inductively coupled plasma. The sensor was mounted on the inner wall of plasma chamber. Measurement results show that the dependence of electron density of plasma source - - RF power predicted by the sensor agrees with the Hairpin probe measurements.
Keywords :
finite element analysis; interferometry; microwave detectors; plasma density; plasma diagnostics; semiconductor technology; Ansoft HFSS; PECVD; U-shaped transmission line; finite element method; full-wave electromagnetic simulator; high frequency structure simulation code; microstrip-line microwave interferometer; phase velocity; planar transmission-line microwave interferometer; plasma based semiconductor fabrication tools; plasma density monitoring; plasma density profiles; plasma etchers; plasma source RF power; process real-time feedback control; processing plasmas; substrate thickness; transmission-line type microwave sensor; Electrons; Microstrip; Monitoring; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Plasma simulation; Plasma sources; Transmission lines;
Conference_Titel :
Plasma Science, 2008. ICOPS 2008. IEEE 35th International Conference on
Conference_Location :
Karlsruhe
Print_ISBN :
978-1-4244-1929-6
Electronic_ISBN :
0730-9244
DOI :
10.1109/PLASMA.2008.4590662